diode voltage
英 [ˈdaɪəʊd ˈvəʊltɪdʒ]
美 [ˈdaɪoʊd ˈvoʊltɪdʒ]
网络 二极管正向电压
双语例句
- During an ESD event, both D1 and D2 can conduct, but the voltage at VIN exceeds the power-supply-rail voltage by only two forward-biased diode voltage drops.
在ESD事件中，D1和D2可以进行传导，但通过两个前置偏移二极管压降，VIN端的电压超出供电电源电压。 - Hardware involving various IC design of the interface between the counter or register with luminous diode interface, and output DC voltage power circuit and shocks export interfaces.
硬件的设计中涉及了各类IC之间的接口，计数器或寄存器与发光二极管的接口，以及直流稳压电源输出和振荡电路输出的接口。 - In this method, the capacitance of the varactor diode is changed by voltage.
本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。 - At the same instant, Q3 sources current into R4 through D1, thereby pulling the voltage on R4 to a diode drop below the supply voltage.
与此同时，Q3的源电流通过D1流到R4，从而拉动R4的电压，使二极管电压降到低于电源。 - The SiC power diode with blocking voltage up to 12.3 kV and current density up to 100A/ cm~ 2 has been developed.
SiC大功率二极管的研制水平，标定阻断电压达12.3kV，正向电流密度达100A/cm2。 - But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands.
但就制备高反向击穿电压的微波PIN二极管而言，这些工艺已不能满足要求。 - Therefore, the examination of the zener diode voltage drift parameter has the vital significance.
因此，稳压二极管电压漂移参数的检测具有重要的意义。 - The relation of diode p-n knot's forward direction voltage with temperature changing, and methods of proceeding nonlinear reparation are introduced.
介绍了二极管p－n结正向电压随温度变化的关系及进行非线性补偿的一种方法； - In the voltage regulator circuit, the zener diode which acts as the voltage datum, along with the temperature change, its regulated voltage value also can have the corresponding change.
在稳压电路中，作为电压基准的稳压二极管，随着温度的变化，其稳定电压值亦会发生相应的变化。 - Secondly, in order to reduce the diode voltage stress, an improved AHB converter is proposed.
为了消除不对称半桥变换器中变压器副边整流管上的电压尖峰，采用了改进型不对称半桥变换器。 - With the diode voltage and electron beam current fixed, the increasing of the absorptive rate of foil results in the decrease of microwave output power, but these kinds of changes have little effect on microwave frequency.
束流参数不变的情况下，阳极网吸收率的增大，将导致微波输出功率降低，但对微波频率影响很小。 - A novel minimum-voltage active-clamping ( MVAC) PFC controller was developed, which can provide effective control scheme for the MVAC PFC converter, to suppress the reverse-recovery current of boost diode and minimize the voltage stress of switch devices.
设计了一种可实现最小电压有源箝位功能的新型PFC控制器，分析了相应的控制策略，并给出电路实现方法。 - The infrared sensor detects the infrared light by measuring the diode junction voltage which varies with temperature.
该红外传感器利用二极管两端的电压随温度变化特性来感测红外线。 - Research on topology of hybrid diode-clamping multilevel voltage inverter
混合二极管箝位多电平变换器的拓扑结构研究 - A type of laser diode driver with low voltage and high speed
一种低电压高速激光二极管驱动器 - In this paper a new amorphous silicon thin-film transistor ( a-Si TFT) pixel circuit for an active matrix organic light-emitting diode ( AMOLED) employing a voltage programming has been proposed which consists of five switching TFTs, one driving TFT, and one capacitor.
本文设计了一种新颖的电压模式非晶硅薄膜晶体管（a-SiTFT）AMOLED的像素驱动电路，该电路包含五个开关晶体管、一个驱动晶体管和一个存储电容。 - The diode has breakdown voltage of up to 80 V and capacitance as low as 0. 2 PF.
器件击穿电压高达80V，最小电容0.2pF。 - The relation among the coaxial diode impedance, the potential distribution in diode gap and the external voltage are also derived, and the relative error is analyzed comparing with the precision numerical evaluation of the 1D analytic model.
给出了同轴二极管阻抗、间隙电压分布与二极管外加电压以及结构参数之间的关系式，并与1维模型精确数值解进行比较分析。 - According to the Maxwell equations, an analytic solution related with coaxial diode current, applied voltage and geometry parameters is obtained by introducing certain approximation.
从描述电子束运动的基本方程出发，引入一定条件下的近似，获得了一种实用的同轴二极管电流、电压与几何参数关系的近似解析解。 - Self-Sealed Silicon Field Emitting Diode Operating at Low Voltage
自封闭低压硅场致发射二极管的研究 - As for its development level, the SiC Schottky diode with blocking voltage up to 1200V, current up to 20 A has been put into production;
至于其发展水平，SiC肖特基二极管的标定阻断电压达1.2kV、电流20A，并已投入生产； - The junction has critical IV characteristic curve of a normal diode, and the voltage to turn on is ( 1.0 V).
该结呈现典型的二极管伏安特性曲线，开启电压为1.0V。 - For small positive angle bevelled power diode under reverse biased voltage, the surface depletion region extension is almost in the low doped n region, the extension in p region seems to be pinched.
小正斜角造型大功率硅整流管在反向偏置下，表面耗尽区在稳态光电导下的扩展几乎都是在低掺杂的n区进行，p区的扩展被“钉扎”。 - A DC high-voltage switching source system model was developed including a buck converter, resonant converter, high voltage transformer and diode-capacitor voltage multiplier.
建立了包含Buck变换器、谐振变换器、高压变压器和倍压整流器的直流高压开关电源系统仿真模型。 - Due to the halved transformer primary voltage, the rectifier diode voltage stresses are reduced distinctly.
由于半桥的特殊结构能够将变压器原边电压减半，输出整流二极管上承受的最大电压也将因此大大减小，从而优化了输出整流器件的设计和选择，同时也为减小变流器的传导损耗创造了条件。 - Here, we present a method of the semiconductor diode shielding the negative voltage that starvation produces, by inhibiting the negative voltage to achieve the function of protecting the fuel cell.
在此，我们提出了采用半导体二极管屏蔽电池缺气产生的负压的方法，通过抑制负压以达到保护电池的作用。 - According to the design parameters of converter circuit, structures the SABER-based open-loop simulation model, gives an analysis and verifies the working status of the push-pull forward converter circuit, focusing on the verification of the effect of CDD buffer circuit to restrain rectifier diode peak voltage.
根据所设计的变换器电路参数，搭建基于Saber仿真软件的开环仿真模型，分析并验证推挽正激变换器电路工作状态，着重验证了CDD缓冲电路抑制整流二极管电压尖峰的效果。